SiC单晶生长

SiC单晶生长 Growth of Bulk SiC 刘喆　 徐现刚　 摘　要：本文综述了国际上SiC单晶生长的发展历史及现状.从其结构特点生长方法的选择,生长过程中的问题以及存在的晶体缺陷等方面进行了介绍. 关键词：碳化硅;单晶生长;宽禁带半导体 分类号：O782.7　文献标识码：A 文章编号：1004-793X(2003)02-0274-05

基金项目：国家杰出青年科学基金资助项日(60025409)和863资助项日(2001AA31108). 作者简介：刘喆(1978-),女,硕士研究生,从事SiC晶体生长的研究. 作者单位：刘喆（山东大学晶体材料国家重点实验室,山东,济南,250100）　 　　　　　徐现刚（山东大学晶体材料国家重点实验室,山东,济南,250100）　 参考文献： ［1］W.F. Knippenberg, Growth Phenomena in Silicon Carbide. Philips Research Reports, 1963,18:16～274. ［2］J.A. Lely,Ber. Dent. Keram..Ges,1955,28:229. ［3］Yu. M. Tairov, V. F. Tsvetkov. Investigation of growth processes of ingots of Silicon carbide single crystals . Journal of Crystal Growth, 1978,43:209～212. ［4］Yu. m. Tairov, V. F. Tsvetkov. General principles of growing largesize single crystals of various silicon carbide polytypes. . Journal of Crystal Growth, 1981,52: 146～150. ［5］Dieter H. Hofman, Matthias H. Muller. Prospects of the use liquid phase techniques for the growth of bulk silicon carbide crystals. .Mater. Sci. and Eng. B, 1999,61～62: 29～39. ［6］G. Ziegler, P. Lanig, Dietmar Theis, Claus Weyrich. Single crystal growth of SiC substrate material for blue light emitting diodes. .IEEE Trans. Electron. Devices ED, 1983,30(4): 277. ［7］M. Muller, M. Bickermann, D. Hofmann, A. D . Weber, A. Winnack-er. Studies on SiC liquid phase crystallization as technique for SiCbulk growth. Mater. Sci. Forum, 1998,264～268:69～72. ［8］R. Yakimova, E. Janzen. Current States and advances in the growth of SiC . Diamond and Related Materials, 2000,9: 432～438. ［9］G. Augustine, H. Mcd. Hobgood, V. Balakrishna, G. Dunne, R. H.Hopkins. Physical vapor transport growth and properties of SiC monocrystals of 4H polytype. Phys. Stat. Sol. (b), 1997,202:137～148. ［10］D. Schulz, G. Wagner, J. Dolle, K. Irmscher, T. Muller , H. J. Rost,D. Siche, J. Wollweber. Impurity incorporation during sublimationgrowth of 6H bulk SiC. . Journal of Crystal Grwoth, 1999, 198/199:1024～1027. ［11］Yu. M. Tairov. Growth of bulk SiC . Mater. Sci. and Eng. B.,1999,61～62:83～89. ［12］R. Yakimova, M. Syvajarvi, M. Tuominen, T. Iakimov, P. Raback, A.Vehanen, E. Janze-n. Seed sublimation growth of 6H and 4H-SiC crystals . Mater. Sci. and Eng. B, 1999,61-62: 54-57. ［13］M.S. Ramm, E. N. Mokhov, et al. Optimization of sublimation growth of SiC bulk Crystals using modeling . Mater. Sci. and Eng. B.,1999,61～62: 107～112. ［14］I.A. Zhmakin, A. V. Kulik, Yu, Karpov, S. E. Demina, M. S. Ramm,Yu. N. Makarov. Evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide . Diamond and Related Mater. 2000,9: 446～451. ［15］D. Schulz, G. Wagned et al. Influence of excess silicon on the surface morphology and defect structure during the initial stages of SiC sublimation grwoth. Mater. Sci. and Eng. B, 1999,61～62: 86～88. ［16］Yu. A. Vodakov, A. D. Roenkov, M. G. Ramm, E. N. Mokhov, Yu.N. Makarov. Use of Ta-cotainer for sublimation Growth and doping of SiC bulk crystals and epitaxial layers. Phys. Stat. Sol. (b), 1997,202: 77～200. ［17］S.Yu. Karpov,Yu.N.Mararov,M.S. Ramm. Simulation of sublimation growth of SiC single crystals . Phys. Stat. Sol (b), 1997,202:201～220. ［18］K. Chowron, M. Anikin, J. M. Bluet, J. M. Dedulle, R. Madar, M.Pons, E. Blauqueet, C. B. ernarad. Moddelling of SiC sublimation growth process: analyses of macrodefects formation . Mater. Sci.and Eng. B, 1999,61～62: 82～85. ［19］J. Heindl, H. P. Strunk, V. D. Heydemann, G. Pensl. Micropipes:Hollow Tubes in Silicon Carbide . Phys. Stat. Sol (a), 1997,162:251～262. ［20］NoboruOhtani, Masakazu Katsuno, Tatsuo. Fujimoto, Takashi. Aigo,Hirokatusu Yashiro. Surface step model for micropipe formation in SiC . Journal of Crystal Growth, 2001,226: 254～260. ［21］M. Tuominen, R. Yakimova, A. Vehanen, E. Janzen. Defect origin and development in sublimation grown SiC boubles. Mater. Sci.and Eng. B, 1999,57: 228～223. ［22］V.D. Heydemann, N, Schulze D. L. Barrett, G. Pensl. Sublimation growth of 4H-and 6H-SiC bouble crystals . Diamond and related mater, 1997,6:1262～1265. ［23］Norbert Schulze, Donovan L. Barrett G. Pensl, S. Rohmfeld, M. Hundhausen. Near-thermal equilibrium growth of SiC by physical vapor transport . Mater. Sci. and Eng. B, 1999,61～62: 44～47. ［24］Naohiro Sugiyama, Atsuto Okamoto Kohei Okumura, Yoshihiko Tani,Nobuo Kamiya. Step structures and dislocations of SiC single crystals grown by modified Lely method .Journal of Crystal Growth, 1998,191:84～91. ［25］A. Fissel. Relationship between grwoth conditions, thermodynamic properties and crystal structure of SiC. International Journal of inorganic materials,2001,3:1273～1275. ［26］Takahashi,N.Ohtani. Modified-Lely SiC crystals growth in<1100>and <1110> directions. Phys. Stat. Sol(b), 1997,202:163～175. ［27］J. Takahashi Masatoshi Kanaya, Yuichiro Fujiwara. Sublimation grwoth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane. Journal of Crystal Grwoth, 1994, 135: 61～70. ［28］R. Yakimova, M. Syvajarvi, T. Iakimov, H. Jacobsson, R. Rback, A.Vehanen, E. Janzen, Polytype stability in seeded sublimation growth of 4H-SiC boubles . Journal of Crystal Growth, 2000,217: 255～262.

收稿日期：2002年8月10日 修稿日期：2002年10月29日 出版日期：2003年4月20日