无锡固电ISC供应2SC3710三极管

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DESCRIPTION                                             

·Low Collector Saturation Voltage-

: VCE(sat)= 0.4V(Max)@IC= 6A

·Good Linearity of hFE

·High Switching Speed

·Complement to Type 2SA1452

 

 

APPLICATIONS

·Designed for high current switching applications

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                     

80

V

VCEO

Collector-Emitter Voltage                        

80

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

12

A

IB

Base Current-Continuous

2

A

PC

Collector Power Dissipation

@ TC=25

30

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 50mA ; IB= 0

80

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 6A; IB= 0.3A

 

 

0.4

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 6A; IB= 0.3A

 

 

1.2

V

ICBO

Collector Cutoff Current

VCB= 80V ; IE= 0

 

 

10

μA

IEBO

Emitter Cutoff Current

VEB= 6V ; IC= 0

 

 

10

μA

hFE-1

DC Current Gain

IC= 1A ; VCE= 1V

70

 

240

 

hFE-2

DC Current Gain

IC= 6A ; VCE= 1V

40

 

 

 

COB

Output Capacitance

IE= 0; VCB= 10V;ftest= 1MHz

 

220

 

pF

fT

Current-Gain—Bandwidth Product

IC= 1A; VCE= 5V

 

80

 

MHz

Switching Times

ton

Turn-on Time

IC= 6A ,IB1= -IB2= 0.3A,

VCC= 30V, RL= 5Ω

 

0.2

 

μs

tstg

Storage Time

 

1.0

 

μs

tf

Fall Time

 

0.2

 

μs

 

u hFE-1Classifications

O

Y

70-140

120-240

 

是否提供加工定制

品牌/商标

ISC

型号/规格

2SC3710

应用范围

放大

材料

硅(Si)

极性

NPN型

结构

平面型

封装形式

直插型

封装材料

塑料封装