无锡固电ISC供应2SB1343三极管

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DESCRIPTION                                             

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -100V(Min)

·HighDC Current Gain-

: hFE=1000(Min)@ (VCE= -3V, IC= -2A)

 

 

APPLICATIONS

·Designed for power amplifier applications.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous  

-8

A

ICM

Collector Current-Peak  

-10

A

PC

Collector Power Dissipation

@Ta=25

2

W

Collector Power Dissipation

@TC=25

40

TJ

Junction Temperature

150

Tstg

Storage Temperature

-55~150

 

ELECTRICAL CHARACTERISTICS

 

Tj=25unless otherwise specified

 

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -5mA; IB= 0

-100

 

 

V

V(BR)CBO

Collector-BaseBreakdownVoltage

IC= -50μA; IE= 0

-100

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -3A; IB= -6mA

 

 

-1.5

V

ICBO

Collector Cutoff Current

VCB= -100V ; IE= 0

 

 

-10

μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

 

 

-3

mA

hFE

DC Current Gain

IC= -2A ; VCE= -3V

1000

 

20000

 

COB

Output Capacitance

IE= 0; VCB= -10V; ftest= 1MHz

 

90

 

pF

fT

Current-Gain—Bandwidth Product

IE= 0.5A; VCE= -5V; ftest= 10MHz

 

12

 

MHz

 

 


加工定制

品牌/商标

ISC

型号/规格

2SB1343

应用范围

放大

材料

硅(Si)

极性

PNP型

结构

平面型

封装形式

直插型

封装材料

塑料封装