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DESCRIPTION                                             

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -50V(Min)

·DC Current Gain-

: hFE=50(Min)@ (VCE= -1V,IC= -6A)

·Low Saturation Voltage-

: VCE(sat)= -0.35V(Max)@ (IC= -6A, IB-0.6A)

 

 

APPLICATIONS

·Designed for DC motor driver, chopper regulator and

general purpose applications.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous  

-12

A

IB

Base Current-Continuous  

-3

A

PC

Collector Power Dissipation

@TC=25

35

W

TJ

Junction Temperature

150

Tstg

Storage Temperature

-55~150

 

ELECTRICAL CHARACTERISTICS

Tj=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -25mA ; IB= 0

-50

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -6A; IB= -0.3A

 

 

-0.35

V

ICBO

Collector Cutoff Current

VCB= -50V ; IE= 0

 

 

-100

μA

IEBO

Emitter Cutoff Current

VEB= -6V; IC= 0

 

 

-100

μA

hFE1

DC Current Gain

IC= -6A ; VCE= -1V

50

 

 

 

COB

Output Capacitance

IE=0 ; VCB= -10V;ftest= 1.0MHz

 

330

 

pF

fT

Current-Gain—Bandwidth Product

IE= 0.5A ; VCE= -12V

 

40

 

MHz

Switching Times

ton

Turn-on Time

IC= -6A ,RL= 4Ω,

IB1= -IB2= -0.12A,VCC=-24V

 

0.4

 

μs

tstg

Storage Time

 

0.4

 

μs

tf

Fall Time

 

0.2

 

μs

 

是否提供加工定制

品牌/商标

ISC

型号/规格

2SA1567

应用范围

放大

材料

硅(Si)

极性

PNP型

结构

平面型

封装形式

直插型

封装材料

塑料封装