IRF3808PBF(图)
地区：广东 深圳
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- Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax - Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET ? Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175°C
junction operating temperature, low RθJC, fast switching speed and
improved repetitive avalanche rating. This combination makes the
design an extremely efficient and reliable choice for use in higher
power Automotive electronic systems and a wide variety of other
applications.
