图文详情
产品属性
相关推荐
INFINEON*场效应管/散新管IPW60R045CP
INFINEON*场效应管/散新管IPW60R045CP
IPW60R045CP产品规格 参数 PDF
Datasheets IPW60R045CP
Product Photos TO-247 Pkg
Product Training Modules CoolMOS™ CP Switching Behavior
CoolMOS™ CP High Voltage MOSFETs Converters
Catalog Drawings Mosfets TO-247
Standard Package 240
Category Discrete Semiconductor Products
Family FETs - Single
Series CoolMOS™
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25° C 60A
Rds On (Max) @ Id, Vgs 45 mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Gate Charge (Qg) @ Vgs 190nC @ 10V
Input Capacitance (Ciss) @ Vds 6800pF @ 100V
Power - Max 431W
Mounting T*e Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
Packaging Tube
Catalog Page 1395 (US2011 Interactive)
1395 (US2011 PDF)
Other Names IPW60R045CP-ND
IPW60R045CPIN
IPW60R045CPXK
IPW60R045CSX
SP
INFINEON/英飞凌
IPW60R045CP
结型(JFET)
N沟道
耗尽型
MOS-HBM/半桥组件
CER-DIP/陶瓷直插
ALGaAS铝镓砷
22(V)
22(V)
22(μS)
22(pF)
22(dB)
22(mA)
22(mW)