*原装场效应 MOS管 IPB042N10N3G

*原装正品场效应 MOS管 IPB042N10N3G

*原装正品场效应 MOS管 IPB042N10N3G

IPB042N10N3G产品规格  参数  PDF

Datasheets IPx0(42,45)N10N3 G
Standard Package 1,000
Category Discrete Semiconductor Products
Family FETs - Single
Series OptiMOS™
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25° C 100A
Rds On (Max) @ Id, Vgs 4.2 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 150µA
Gate Charge (Qg) @ Vgs 117nC @ 10V
Input Capacitance (Ciss) @ Vds 8410pF @ 50V
Power - Max 214W
Mounting T*e Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads Tab), TO-263AB
Supplier Device Package PG-TO263-3
Packaging Tape & Reel (TR)
Other Names IPB042N10N3GE8187ATMA1
SP