【墨西哥IR*原装场效应管】IRFB52N15DPBF FB52N15D

【墨西哥IR*原装场效应管/三*管】IRFB52N15DPBF  FB52N15D

【墨西哥IR*原装场效应管/三*管】IRFB52N15DPBF  FB52N15D

IRFB52N15DPBF  FB52N15D产品规格  参数

Datasheets IRFB52N15DPbF, IRFS(L)52N15DPbF
Product Photos TO-220AB PKG
Catalog Drawings IR Hexfet TO-220AB
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series HEXFET®
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25° C 51A
Rds On (Max) @ Id, Vgs 32 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 89nC @ 10V
Input Capacitance (Ciss) @ Vds 2770pF @ 25V
Power - Max 3.8W
Mounting T*e Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Packaging Tube
Catalog Page 1297 (US2011 Interactive)
1297 (US2011 PDF)
Other Names *IRFB52N15DPBF