现货供应AOS万代系列场效应管 MOS管AOU401

AOU401
P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -60V
ID = -26 A (VGS = -10V)
RDS(ON) < 40 mΩ (VGS = -10V) @ 20A
RDS(ON) < 55 mΩ (VGS = -4.5V)
General Description
The AOU401 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU401 is Pb-free (meets ROHS & Sony
259 specifications). AOU401L is a Green Product
ordering option. AOU401 and AOU401L are
electrically identical.

*51 223 MOS管