现货供应AOS万代系列场效应管 MOS管AOD406

AOD406
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 5.0mΩ (VGS = 10V)
RDS(ON) < 5.7mΩ (VGS = 4.5V)
General Description
The AOD406 uses advanced trench technology to provide
excellent RDS(ON), shoot-through immunity and body diode
characteristics. This device is ideally suited for use as a low
side switch in CPU core power conversion. Standard
Product AOD406 is Pb-free (meets ROHS & Sony 259
specifications). AOD406L is a Green Product ordering
option. AOD406 and AOD406L are electrically identical.
                                                              
TO-252
D-PAK
Top View

*51 223 MOS管