IXFH10N100P
地区:上海
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Product Detail |
Part Num: | IXFH10N100P | |
Description: | POWER DEVIC* > DISCRETE MOSFETs > N-Channel: Power MOSFETs w/Fast Intrinsic Diode (HiPerFETs) > Polar™ HiPerFETs (500V to 1200V) with reduced Rds(on) | |
Configuration: | Single | |
Package Style: | TO-247 | |
Status: | Active Part | |
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Recommended Alternatives Competing Parts Parameter品牌/商标IXYS/艾赛斯
型号/规格IXFH10N100P
种类*缘栅(MOSFET)
沟道类型N沟道
导电方式增强型
开启电压na(V)
夹断电压na(V)
跨导na(μS)
*间电容na(pF)
低频噪声系数na(dB)
漏*电流na(mA)
耗散功率na(mW)