双N沟道数码管FDC6301N
地区：广东 深圳
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| 品牌：FAIRCHILD/*童 | 型号：FDC6301N | 种类：*缘栅(MOSFET) |
| 沟道类型：N沟道 | 导电方式：增强型 | 用途：HI-IMP/高输入阻* |
| 封装外形：SMD(SO)/表面封装 | 开启电压：25（V） | 夹断电压：8（V） |
| 跨导：0.25（μS） | *间电容：9.3（pF） | 低频噪声系数：10（dB） |
| *大漏*电流：22（mA） | *大耗散功率：9（mW） |
hese dual N-Channel logic level enhancement mode field
effect transistors are produced using Fairchild 's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage
applications as a replacement for di*al transistors. Since bias
resistors are not required, these N-Channel FET's can replace
several di*al transistors, with a variety of bias resistors.
