MOS管SI4884DY

品牌：Vishay/威世通	型号：SI4884DY	种类：*缘栅(MOSFET)
沟道类型：N沟道	导电方式：增强型	封装外形：SMD(SO)/表面封装
材料：N-FET硅N沟道	开启电压：5（V）	夹断电压：6（V）
低频跨导：20（μS）	*间电容：650（pF）	低频噪声系数：50（dB）
大漏电流：30（mA）	*大耗散功率：20（mW）

Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:12A; On-Resistance, Rds(on):10.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V

General Description                                                                       Features

Absolute Maximum Ratings      TA = 25o
C unless other wise noted
Symbol Parameter Si4884DY Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage &plu*n;20 V
ID Drain Current - Continuous                           (Note 1a) 11.5 A
                        - Pulsed 50
PD Power Dissipation for Single Operation       (Note 1a) 2.5 W
                                                                                  (Note 1b) 1.2
                                                                                  (Note 1c) 1
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARA*ERISTICS
RθJA Thermal Resistance, Junction-to-Ambient   (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Case         (Note 1) 25 °C/W
Si4884DY Rev.A
11.5 A, 30 V. RDS(ON)
= 0.010 Ω @ VGS = 10 V
                          RDS(ON)
= 0.015 Ω @ VGS = 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching.
Low gate charge (t*ical Qg = 19 nC).
SOT-23 SuperSOTTM-8 SOIC-16 SO-8 SOT-223 SuperSOTTM-6
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
The MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.