代理商销售UTC之低压贴片P-MOS UP2003

P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFE* TRANSISTOR
D*CRIPTION
The UP2003 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATUR*
* VDS(V)=-25V
* ID=-9 A
* RDS(ON)<35 mΩ@ VGS =-4.5 V, ID =-7 A
* RDS(ON)<20 mΩ@ VGS =-10 V, ID =-9 A