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一、IGBT单管 IGW60T120主要技术参数
• Best in cl* TO247
• Short circuit withstand time – 10μs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fields* technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
二、IGBT单管 IGW60T120实物拍摄
IGBT单管 IGW60T120
IGBT单管 IGW60T120
IGBT单管 IGW60T120
IGBT单管 IGW60T120
*说明:尊敬的客户,本公司发布的产品价格为参考价格。如需获取具体产品信息请咨询旺旺在线客服,或拨打。公司全体员工*恭候您来电来函咨询。
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"P-DIT/塑料双列直插
IGW60T120
N-FET硅N沟道
A/宽频带放大
INFINEON/英飞凌
N沟道
*缘栅(MOSFET)
增强型