*现货 MOS管2SK3018

品牌/商标	ROHM/长电	型号/规格	2SK3018
种类	结型(JFET)	沟道类型	N沟道
导电方式	增强型	用途	A/宽频带放大
封装外形	SMD(SO)/表面封装	材料	N-FET硅N沟道
开启电压	20（V）	夹断电压	1（V）
*间电容	0.2（pF）	低频噪声系数	20（dB）
大漏电流	1（mA）	*大耗散功率	2（mW）

2.5V Drive Nch MOS FET
2SK3018
zStructure
Silicon N-channel
MOSFET
zApplications
Interfacing, switching (30V, 100mA)
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
zExternal dimensions (Unit : mm)
Each lead has same dimensions
UMT3
Abbreviated symbol : KN
0.2
0.15
0.1Min.
0.9
0.7
1.25
2.1
0.3
(3)
0.65
(2)
2.0
1.3
(1)
0.65
(1) Source
(2) Gate
(3) Drain
zPackaging specifications
T106
3000
2SK3018
T*e
Package
Code
Basic ordering unit
(pieces)
Taping
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
VDSS
VGSS
PD∗2
Tch
30 V
V
mA
mW
°C
&plu*n;20
ID &plu*n;100
IDP∗1
Continuous
Pulsed &plu*n;400 mA
200
150
Tstg −55 to +150 °C
Symbol Limits Unit
∗1 Pw≤10μs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
zEquivalent circuit
Drain
Source
Gate
∗ Gate
Protection
Diode
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
zThermal resistance
Parameter
Rth(ch-a) °C / W
Symbol Limits Un