*现货三*管KT*375

品牌/商标	KEC	型号/规格	KT*375
应用范围	功率	功率特性	*率
频率特性	中频	*性	NPN型
结构	面接触型	材料	硅(Si)
封装形式	SOT-89	封装材料	树脂封装
截止频率fT	200（MHz）	集电**大允许电流ICM	100M（A）
集电**大耗散功率PCM	200M（W）	营销方式	现货
产品性质	*

*现货供应三*管KT*375

HIGH CURRENT APPLICATION.
FEATUR*
·1W (Mounted on Ceramic Substrate).
·Small Flat Package.
·Complementary to KTA1663.
MAXIMUM RATING (Ta=25℃)
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
1 2 3
2. COLLE*OR (HEAT SINK)
A
C
K
J
F
MILLIMETERS
H
1. BASE
3. EMITTER
B
E
F F
D +_
+_
ELE*RICAL CHARA*ERISTICS (Ta=25℃)
Note : hFE Cl*ification O:100∼200, Y:160∼320
PC* : KT*375 mounted on ceramic substrate (250mm2x0.8t)
G
T*e Name
h F E Rank Lot No.
Marking
CHARA*ERISTIC SY*OL RATING UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1.5 A
Base Current IB 0.3 A
Collector Power Dissipation
PC 500 mW
PC* 1 W
Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55∼150 ℃
CHARA*ERISTIC SY*OL T*T CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=30V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 5 - - V
DC Current Gain hFE (Note) VCE=2V, IC=500mA 100 - 320
Collector-Emitter Saturation Voltage VCE(sat) IC=1.5A, IB=0.03A - - 2.0 V
Base-Emitter Voltage VBE VCE=2V, IC=500mA - - 1.0 V
Transition Frequency fT VCE=2V, IC=500mA - 120 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - -

*现货 三*管KT*375

现货三管KT*375