*现货供应 三*管KTA1663

*现货供应 三*管KTA1663

SEMICONDU*OR
TECHNICAL DATA
KTA1663
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
HIGH CURRENT APPLICATION.
FEATUR*
·1W (Mounted on Ceramic Substrate).
·Small Flat Package.
·Complementary to KT*375.
MAXIMUM RATING (Ta=25℃)
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45 0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5 0.10/-0.05
SOT-89
C
J
G
D
1 2 3
2. COLLE*OR (HEAT SINK)
A
C
K
J
F
MILLIMETERS
H
1. BASE
3. EMITTER
B
E
F F
D _
_
ELE*RICAL CHARA*ERISTICS (Ta=25℃)
Note : hFE Cl*ification O:100∼200, Y:160∼320
PC* : KTA1663 mounted on ceramic substrate (250mm2x0.8t)
H
T*e Name
h F E Rank Lot No.
Marking
CHARA*ERISTIC SY*OL RATING UNIT
Collector-Base Voltage VCBO -30 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -1.5 A
Base Current IB -0.3 A
Collector Power Dissipation
PC 500 mW
PC* 1 W
Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55∼150 ℃
CHARA*ERISTIC SY*OL T*T CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -5.0 - - V
DC Current Gain hFE (Note) VCE=-2V, IC=-500mA 100 - 320
Collector-Emitter Saturation Voltage VCE(sat) IC=-1.5A, IB=-0.03A - - -2.0 V
Base-Emitter Voltage VBE VCE=-2V, IC=-500mA - - -1.0 V
Transition Frequency fT VCE=-2V, IC=-500mA - 120 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 50 pF