功率场效应管

Parameter

Symbol

Value

Unit

Drain-source Voltage (V_GS = 0)

V_DS

75

V

Drain-gate Voltage (R_GS = 20 k)

   V_DGR

75

V

Gate- source Voltage

   V_GS

± 20

V

Drain Current (continuous) at T_C = 25°C

I_D

80

A

Drain Current (continuous) at T_C = 100°C

I_D

70

A

Drain Current (pulsed)

   I_DM(•)

320

A

Total Dissipation at T_C = 25°C

P_tot

300

W

Derating Factor

2.0

W/°C

Peak Diode Recovery voltage slope

    dv/dt ⁽¹⁾

12

V/ns

Single Pulse Avalanche Energy

   E_AS ⁽²⁾

700

mJ

Insulation Withstand Voltage (DC)

V_ISO

V

Storage Temperature

T_stg

-55-175

°C

Operating Junction Temperature

T_j