供应 场效应管 FQP6N80 6N80

产品型号:FQP6N80 800V N-Channel MOSFET

封装:TO-220

品牌：FAIRCHILD/仙童

源漏极间雪崩电压V(br)dss(V):800

夹断电压VGS(V):±30

最大漏极电流Id(A):5.8

源漏极最大导通电阻rDS(on)(Ω):1.95 @VGS = 10 V

开启电压VGS(TH)(V):5

功率PD(W):158

输入电容Ciss(PF):1150 typ.

通道极性:N沟道

低频跨导gFS(s)：5.9

单脉冲雪崩能量EAS(mJ):680

导通延迟时间Td(on)(ns):30 typ.

上升时间Tr(ns):70 typ.

关断延迟时间Td(off)(ns):65 typ.

下降时间Tf(ns):45 typ.

温度(℃): -55 ~150

描述:FQP6N80,TO-220,DIP/MOS,N场,800V,5.8A,1.95Ω N-沟道增强型场效应晶体管
   These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.
   This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

特点：
 * 5.8A, 800V, RDS(on) = 1.95Ω @VGS = 10 V
 * Low gate charge ( typical 31 nC)
 * Low Crss ( typical 14 pF)
 * Fast switching
 * 100% avalanche tested
 * Improved dv/dt capability

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专业经营：各种三极管、场效应管、可控硅、稳压ＩＣ、开关电源IC、肖特基、IGBT等
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