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产品型号:AOT502
概述
AOT502 uses an optimally designed temperature compensated gate-drain
zener clamp. Under overvoltage conditions, the clamp activates and turns
on the MOSFET, safely dissipating the energy in the MOSFET.
The built in resistor guarantees proper clamp operation under all circuit
conditions, and the MOSFET never goes into avalanche breakdown. Advanced
trench technology provides excellent low Rdson, gate charge and body
diode characteristics, making this device ideal for motor and inductive
load control applications.
应用范围:
* LED电源控制器
封装:TO-220F
源漏极间雪崩电压V(br)dss(V):33
夹断电压VGS(V):
最大漏极电流Id(A):60
源漏极最大导通电阻rDS(on)(Ω):0.0115 @VGS = 10 V
开启电压VGS(TH)(V):2.7
功率PD(W):79
输入电容Ciss(PF):1205 typ.
通道极性:N沟道
低频跨导gFS(s):55
单脉冲雪崩能量EAS(mJ):41
导通延迟时间Td(on)(ns):13.5 typ.
上升时间Tr(ns):17.5 typ.
关断延迟时间Td(off)(ns):63 typ.
下降时间Tf(ns):27 typ.
温度(℃): -55 ~150
描述:33V,60A N-沟道增强型场效应晶体管
(产品图片,产品参数,产品PDF等产品相关信息在线了解\查询\下载.)
AOT502,TO-220,DIP/MOS,N场,33V,60A,0.0115Ω
AO
TO-220
无铅环保型
直插式
1000/盒
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