供应 场效应管 AO3434,AO3434A,AO3438

AO3434(带二极静电保护）
N-Channel Enhancement Mode Field Effect Transistor

General Description
The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It is ESD protected.Standard Product AO3434 is Pb-free (meets ROHS & Sony 259 specifications).

Features
VDS(V) = 30V
ID = 4.2A                (VGS= 10V)
RDS(ON)  < 52m Ω         (VGS = 10V)
RDS(ON) < 75mΩ       (VGS= 4.5V)

 

AO3438
N-Channel Enhancement Mode Field Effect TransistorFeatures
VDS= 20V
ID = 3A                     (VGS= 4.5V)
RDS(ON) < 62mΩ        (VGS = 4.5V)
RDS(ON) < 70mΩ        (VGS= 2.5V)
RDS(ON) < 85mΩ        (VGS= 1.8V)