供应 场效应管 AO3422,AO3460,3422,3460

AO3422
N-Channel Enhancement Mode Field Effect Transistor

Features
VDS(V) = 55V
ID= 2.1A  (VGS = 4.5V)
RDS(ON) < 160m Ω  (VGS= 4.5V)
RDS(ON) < 200m Ω  (VGS= 2.5V)

AO3460（带二极静电保护)
N-Channel Enhancement Mode Field Effect Transistor

General Description
The AO3460/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected. AO3460 and
AO3460L are electrically identical.

-RoHS Compliant

-AO3460L is Halogen Free

Features
VDS (V) = 60V
ID = 0.65A (VGS = 10V)
RDS(ON) < 1.7Ω  (VGS = 10V)
RDS(ON) < 2 Ω  (VGS = 4.5V)