场效应管 BSC050NE2LS,050NE2LS

BSC050NE2LS,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,58A,0.005Ω

Parameter	Symbol	Conditions	Value	Unit
Drain-source breakdown voltage	V(BR)DSS	VGS=0V,ID=10mA	25	V
Continuous drain current	ID	VGS=10V,TC=25℃	58	A
Pulsed drain current	IDM	TC=25℃	232	A
Power dissipation	Ptot	TC=25℃	28	W
Gate source voltage	VGS		±20	V
Gate threshold voltage	VGS(th)	VDS=VGS,ID=250µA	2.2	V
Avalanche energy, single pulse	EAS	ID=35A, RGS=25Ω	35	mJ
Drain-source on-state resistance	RDS(on)	VGS=10V, ID=30A	5	mΩ
Input capacitance	Ciss	VGS=0V,VDS=12V, f=1MHz	760	PF
Transconductance	gfs	\|VDS\|>2\|ID\|RDS(on)max,ID=30A	75	S

型号/规格

BSC050NE2LS,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,58A,0.005Ω.

品牌/商标

INFINEON（英飞凌）

封装形式

QFN-8 5*6/PG-TDSON-8

环保类别

无铅环保型

安装方式

贴片式

包装方式

5000/盘

供应 场效应管 BSC050NE2LS,050NE2LS