供应 场效应管 BSC042NE7NS3G,042NE7NS
地区：广东 深圳
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| 型 号：BSC042NE7NS3G | ||||
| 标 记: 042NE7NS | ||||
| 类 型：场效应管 | ||||
| 通道极性:N通道 | ||||
| 封 装：QFN-8 5*6/PG-TDSON-8 | ||||
| 备 注：正品 | ||||
| Parameter | Symbol | Conditions | Value | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=1mA | 75 | V |
| Continuous drain current | ID | VGS=10V,TC=25℃ | 100 | A |
| Pulsed drain current | IDM | TC=25℃ | 400 | A |
| Avalanche energy, single pulse | EAS | ID=50A, RGS=25Ω | 220 | mJ |
| Gate source voltage | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25℃ | 125 | W |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=91µA | 3.8 | V |
| Drain-source on-state resistance | RDS(on) | VGS=10V, ID=50A | 4.2 | mΩ |
| Input capacitance | Ciss | VGS=0V,VDS=37.5V, f=1MHz | 3600 | PF |
| Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=50A | 89 | S |
BSC042NE7NS3G,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,75V,100A,0.0042Ω
INFINEON（英飞凌）
QFN-8 5*6/PG-TDSON-8
无铅环保型
贴片式
5000/盘
