供应 场效应管 BSC118N10NSG,118N10NS,BSC118N10

产品型号:BSC118N10NSG

封装:QFN-8 5*6/PG-TDSON-8

源漏极间雪崩电压V(br)dss(V):100

夹断电压VGS(V):±20

雪崩能量EAS(mJ):155

最大漏极电流Id(A):71

源漏极最大导通电阻rDS(on)(Ω):0.0118 @VGS = 10 V

开启电压VGS(TH)(V):4

功率PD(W):114

极间电容Ciss(PF):2800

通道极性:N通道

低频跨导gFS(s)：65

温度(℃): -55 ~150

描述:100V,71A, N-channel OptiMOS Power-MOSFET

Features
? N-channel, normal level
? Excellent gate charge x RDS(on) product (FOM)
? Very low on-resistance RDS(on)
? 150 °C operating temperature
? Pb-free lead plating; RoHS compliant
? Qualified according to JEDEC for target application
? Ideal for high-frequency switching and synchronous rectification

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