现货*供应IRF1407STRRPBF

MOSFET, 75V, 100A, 7.8 mOhm, 160 nC Qg, D2-Pak

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Benefits
PD -94335
Parameter T*. Max. Units
RθJC Junction-to-Case ––– 0.75 °C/W
RθJA Junction-to-Ambient(PCB Mounted,steady-state)** ––– 40
Thermal Resistance

Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a t*ical surface
mount application.
The through-hole version (IRF1407L) is available for lowprofile
applications.