主要应用领域：小功率充电器，PC电源辅助电源
Silicon N-Channel Power MOSFET
CS2N60B3D
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2011
General Description：
CS2N60B3D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features：
Fast Switching
ESD Improved Capability
Low Gate Charge (Typical Data:7.5nC)
Low Reverse transfer capacitances(Typical:5.0pF)
100% Single Pulse avalanche energy Test
