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FDC645N - MOSFET, N, SUP

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品牌/商标	*童半导体	型号/规格	FDC645N - MOSFET, N, SUPERSOT-6
种类	*缘栅(MOSFET)	沟道类型	P沟道
导电方式	增强型

Description

MOSFET, N, SUPERSOT-6
Transistor Polarity:N
Max Current Id:5.5A
Max Voltage Vds:30V
On State Resistance:0.026ohm
Rds Measurement Voltage:10V
Max Voltage Vgs:12V
Power Dissipation:1.6W
Operating Temperature Range:-55ºC to +150ºC
Transistor Case Style:Super-SOT
No. of Pins:6
SVHC:Cobalt dichloride
Case Style:SuperSOT-6
Cont Current Id:5.5A
Current Temperature:25°C
Full Power Rating Temperature:25°C
Max Voltage Vgs th:2V
Power Dissipation Pd:1.6W
Pulse Current Idm:20A
SMD Marking:FDC645N
Termination T*e:SMD
Transistor T*e:MOSFET
T* Voltage Vds:30V
T* Voltage Vgs th:1.4V
Uni / Bi Directional Polarity:N
Voltage Vds:30V
Voltage Vgs Rds on Measurement:10V
SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)

Description

MOSFET, N, SUPERSOT-6
Transistor Polarity:N
Max Current Id:5.5A
Max Voltage Vds:30V
On State Resistance:0.026ohm
Rds Measurement Voltage:10V
Max Voltage Vgs:12V
Power Dissipation:1.6W
Operating Temperature Range:-55ºC to +150ºC
Transistor Case Style:Super-SOT
No. of Pins:6
SVHC:Cobalt dichloride
Case Style:SuperSOT-6
Cont Current Id:5.5A
Current Temperature:25°C
Full Power Rating Temperature:25°C
Max Voltage Vgs th:2V
Power Dissipation Pd:1.6W
Pulse Current Idm:20A
SMD Marking:FDC645N
Termination T*e:SMD
Transistor T*e:MOSFET
T* Voltage Vds:30V
T* Voltage Vgs th:1.4V
Uni / Bi Directional Polarity:N
Voltage Vds:30V
Voltage Vgs Rds on Measurement:10V
SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)