场效应管FQPF4N60C
地区：广东 深圳
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| 品牌：FAIRCHILD/*童 | 型号：FQPF4N60C | 种类：*缘栅(MOSFET) |
| 沟道类型：N沟道 | 导电方式：增强型 | 用途：SW-REG/开关电源 |
| 封装外形：P-DIT/塑料双列直插 | 开启电压：`（V） | 夹断电压：600（V） |
| *间电容：`（pF） | 低频噪声系数：`（dB） | *大漏*电流：`（mA） |
| *大耗散功率：`（mW） |
FQPF4N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply
Features
• 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V
• Low gate charge ( t*ical 15 nC)
• Low Crss ( t*ical 8.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
