*批发场效应管ST2301
地区：广东 深圳
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| 品牌：ST/意法 | 型号：ST2301 | 种类：*缘栅(MOSFET) |
| 沟道类型：N沟道 | 导电方式：增强型 | 封装外形：SMD(SO)/表面封装 |
| 材料：GE-N-FET锗N沟道 | 开启电压：20（V） | 夹断电压：12（V） |
| 跨导：-（μS） | *间电容：-（pF） | 低频噪声系数：-（dB） |
| *大漏*电流：-（mA） | *大耗散功率：-（mW） |
P Channel Enchancement Mode MOSFET
ST2301
-2.8A
D*CRIPTION
The ST2301 is the P-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very *all outine surface mount package.
FEATURE
z -20V/-2.8A, RDS(ON) = 120m-ohm
@VGS = -4.5V
z -20V/-2.0A, RDS(ON) = 170m-ohm
@VGS = -2.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter Symbol T*ical Unit
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS +12 V
Continuous Drain Current (TJ=150℃) TA=25℃TA=70℃ ID -2.5 -1.5 A
Pulsed Drain Current IDM -10 A
Continuous Source Current (Diode Conduction) IS -1.6 A
Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.8 W
Operation Junction Temperature TJ 150 ℃
Storgae Temperature Range TSTG -55/150 ℃
Thermal Resistance-Junction to Ambient RθJA 120 ℃/W
