批发供应FQPF5N60C场效应管
地区：广东 深圳
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| 品牌：FAIRCHILD/*童 | 型号：FQPF5N60C | 种类：*缘栅(MOSFET) |
| 沟道类型：N沟道 | 导电方式：增强型 | 用途：SW-REG/开关电源 |
| 封装外形：P-DIT/塑料双列直插 | 材料：N-FET硅N沟道 | 开启电压：`（V） |
| 夹断电压：`（V） | *间电容：`（pF） | 低频噪声系数：`（dB） |
| *大漏*电流：`（mA） | *大耗散功率：`（mW） |
FQP5N60C/FQPF5N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge *ology.
Features
• 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( t*ical 15 nC)
• Low Crss ( t*ical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
