批发供应场效应管ST2306
地区：广东 深圳
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| 品牌：ST/意法 | 型号：ST2306 | 种类：*缘栅(MOSFET) |
| 沟道类型：N沟道 | 导电方式：增强型 | 封装外形：SMD(SO)/表面封装 |
| 材料：N-FET硅N沟道 | 开启电压：30（V） | 夹断电压：0.4（V） |
| 跨导：-（μS） | *间电容：`（pF） | 低频噪声系数：`（dB） |
| *大漏*电流：`（mA） | *大耗散功率：`（mW） |
N Channel Enhancement Mode MOSFET ST2306
3.5A
D*CRIPTION
The ST2306 is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very *all outline surface mount package.
FEATURE
z 30V/3.5A, RDS(ON) = 70m-ohm
@VGS = 10V
z 30V/2.8A, RDS(ON) = 95m-ohm
@VGS = 5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L /SOT-23 package design
