EMH3 双DTAK13Ts芯片 ROHM原装*现货*

General purpose (dual di*al transistors)
EMH3 / UMH3N / IMH3A

Features
1) Two DTAK13Ts chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
z z z zStructure
Epitaxial planar t*e
NPN silicon transistor
The following characteristics apply to both DTr1 and DTr2.

z z z zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Limits Unit
VCBO 50 V
VCEO 50 V
VEBO 5V
IC 100 mA
Tj 150 °C
Tstg −55~+150 °C
Pc
EMH3,UMH3N 150 (TOTAL)
mW
IMH3A 300 (TOTAL)
∗1
∗2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.