*R20100 VF20120SG VISHAY集成电路IC

*代替 *R20100 原装 VF20120SG VISHAY

High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
VF20120SG
Vishay General Semiconductor
New Product
FEATUR*
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
J*D 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling  diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and J*D 22-B102
M3 suffix meets J*D 201 cl* 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARA*ERISTICS
IF(*) 20 A
VRRM 120 V
IFSM 150 A
VF at IF = 20 A 0.78 V
TJ max. 150 °C
T*S ®
ITO-220AB
1
2
3
VF20120SG
PIN 1 PIN 2
PIN 3
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SY*OL VF20120SG UNIT
Maximum repetitive peak reverse voltage VRRM 120 V
Maximum average forward rectified current (fig. 1) IF(*) 20 A
Peak forward surge current 8.3 ms single half sine-wave
*imposed on rated load IFSM 150 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Isolation voltage from termal to heatsink t = 1 min VAC 1500 V
Operating junction and storage temperature range  TJ, TSTG - 40 to + 150 °C