供应双向可控硅BT137X-800E

四象限双向可控硅 欢迎来电查询.

Limiting values in accordance with the Absolute Maximum System (IEC 134).
SY*OL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
V
DRM
Repetitive peak off-state
-
5001
6001
V
voltages
I
T(RMS)
RMS on-state current
full sine wave; T
mb
≤ 107 C
-
4
A
I
TSM
Non-repetitive peak
full sine wave; T
j
= 25 C prior to
on-state current
surge
t = 20 ms
-
25
A
t = 16.7 ms
-
27
A
I2tI
2
t for fusing
t = 10 ms
-
3.1
A2s
dI
T
/dt
Repetitive rate of rise of
I
TM
= 6 A; I
G
= 0.2 A;
on-state current after
dI
G
/dt = 0.2 A/μs
triggering
T2 G
-
50
A/μs
T2 G-
-
50
A/μs
T2- G-
-
50
A/μs
T2- G
-
10
A/μs
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(*)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
1
2
3
tab
T1
T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac