供应双向可控硅BT136X-600E

四象限双向可控硅 欢迎来电查询.

Gl*
p*ivated,
sensitive
gate
SY*OL
PARAMETER
MAX.
MAX.
UNIT
triacs in a plastic envelope suitable forsurface mounting, intended for use in
BT136S (or BT136M)-
500E
600E
general
purpose
bidirectional
V
DRM
Repetitive peak off-state
500
600
V
switching
and
phase
control
I
T(RMS)
voltages
4
4
A
applications.
These
devices
are
I
TSM
RMS on-state current
25
25
A
intended to be interfaced directly to
Non-repetitive peak on-state current
microcontrollers,
logic
integrated
circuits and other low power gate triggercircuits.