场效应管 2SJ650,J650

2SJ650,TO-220F,DIP/MOS,P场,-60V,-12A,0.135Ω
2SJ654,TO-220F,DIP/MOS,P场,-100V,-8A,0.315Ω
2SJ655,TO-220F,DIP/MOS,P场,-100V,-12A,0.136Ω
2SJ656,TO-220F,DIP/MOS,P场,-100V,-18A,0.0755Ω

产品型号:2SJ650

封装:TO-220F

源漏极间雪崩电压V(br)dss(V):-60

夹断电压VGS(V):±20

最大漏极电流Id(A):-12

源漏极最大导通电阻rDS(on)(Ω):0.135 @VGS = 10 V

开启电压VGS(TH)(V):-2.6

功率PD(W):20

输入电容Ciss(PF):1020 typ.

通道极性:P沟道

低频跨导gFS(s)：10

单脉冲雪崩能量EAS(mJ):

导通延迟时间Td(on)(ns):10 typ.

上升时间Tr(ns):145 typ.

关断延迟时间Td(off)(ns):85 typ.

下降时间Tf(ns):96 typ.

温度(℃): -55 ~150

描述:2SJ650 TO-220F -60V,-12A P-沟道增强型场效应晶体管

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