场效应管 BSC018NE2LSI,018NE2LI
地区：广东 深圳
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BSC018NE2LSI,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,25V,100A,0.0018Ω
| Parameter | Symbol | Conditions | Value | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=10mA | 25 | V |
| Continuous drain current | ID | VGS=10V,TC=25℃ | 100 | A |
| Pulsed drain current | IDM | TC=25℃ | 400 | A |
| Avalanche energy, single pulse | EAS | ID=50A, RGS=25? | 45 | mJ |
| Gate source voltage | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25℃ | 69 | W |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=250µA | 2.2 | V |
| Drain-source on-state resistance | RDS(on) | VGS=10V, ID=30A | 1.8 | m? |
| Input capacitance | Ciss | VGS=0V,VDS=12V, f=1MHz | 2500 | PF |
| Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=30A | 130 | S |
BSC018NE2LSI,PG-TDSON-8,SMD/MOS,N场,25V,100A,0.0018Ω
N-FET硅N沟道
S/开关
INFINEON/英飞凌
MOSFET N 通道，金属氧化物
绝缘栅(MOSFET)
增强型
