场效应管 BSC883N03LSG,883N03LS
地区：广东 深圳
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BSC883N03LSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,34V,98A,0.0038Ω
| Parameter | Symbol | Conditions | Value | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=1mA | 34 | V |
| Continuous drain current | ID | VGS=10V,TC=25℃ | 98 | A |
| Pulsed drain current | IDM | TC=25℃ | 392 | A |
| Power dissipation | Ptot | TC=25℃ | 57 | W |
| Gate source voltage | VGS | ±20 | V | |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=250µA | 2.2 | V |
| Avalanche energy, single pulse | EAS | ID=40A, RGS=25? | 50 | mJ |
| Drain-source on-state resistance | RDS(on) | VGS=10V, ID=30A | 3.8 | m? |
| Input capacitance | Ciss | VGS=0V,VDS=15V, f=1MHz | 2800 | PF |
| Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=30A | 85 | S |
BSC883N03LSG,PG-TDSON-8,SMD/MOS,N场,34V,98A,0.0038Ω
N-FET硅N沟道
S/开关
INFINEON/英飞凌
MOSFET N 通道，金属氧化物
绝缘栅(MOSFET)
增强型
