场效应管 FQPF13N50 FQPF13N50C 13N50

Features
• 13A, 500V, RDS(on)= 0.54? @VGS= 10 V
• Low gate charge (t*ical  43 nC)
• Low Crss (t*ical  20pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (t*ical 100ns)