场效应管 STP27N3LH5,STP21N90K5,27N3LH5

产品型号:STP27N3LH5
特点
 * RDS(ON)Qg和行业基准
 * *低的导通电阻RDS(on)
 * *低的开关栅*电荷
 * 高雪崩坚固耐用
 * 低栅*驱动器的功率损耗

应用
 * 开关应用

封装:TO-220

源漏*间雪崩电压V(br)dss(V):30

夹断电压VGS(V):&plu*n;22

*大漏*电流Id(A):27

源漏**大导通电阻rDS(on)(Ω):0.02 @VGS = 10 V

开启电压VGS(TH)(V):1 MIN.

功率PD(W):45

输入电容Ciss(PF):475 t*.

通道*性:N沟道

低频跨导gFS(s)：

单脉冲雪崩能量EAS(mJ):50

导通延迟时间Td(on)(ns):4 t*.

上升时间Tr(ns):22 t*.

关断延迟时间Td(off)(ns):13 t*.

下降时间Tf(ns):2.8 t*.

温度(℃): -55 ~175

描述:30V,27A N-沟道增强型场效应晶体管
This STripFE V Power MOSFET technology is among the latest improvements,

which have been especially tailored to achieve very low on-state

resistance providing also one of the *-in-cl* figure of merit (FOM).

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