图文详情
产品属性
相关推荐
KIA4N60PF,MOS,600V,4A,2.4Ω,220F,代理,价格优势
1 . Description
The KIA4N60H N-Channel enhancement mode s ilicon gate power MOSFET is designed
for high voltage, high speed power switchingapplications such as sw itching regulators, switching
converters,solenoid, motor drivers, relay drivers.
2 . Features
RDS(ON) =2.5 ? @ VGS=10V
Low gate charge (t*cal 16nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
MOS管,广泛应用于电池充电器,普通电源,智能开关电源,灯具
功率开关,LED,车载,玩具,电动车,电脑主板.
如需了解更多的产品信息:
1、直接与我司工作人员联系!
2、登陆我站:https://www.chinajincheng.com
3、:4006262666
4、Q
(产品图片,产品参数,产品PDF等产品相关信息在线了解\\查询\\下载.)
4.4A
N-FET硅N沟道
*缘栅(MOSFET)
KIA4N60PF,MOS,600V,4A,2.4Ω,220F
P-DIT/塑料双列直插
KIA
N沟道
增强型
&plu*n;30
670