场效应管 STW77N60M5,77N60M5,STW77N60

STW77N60M5，TO-247，，DIP/MOS，N场，600V，69A，0.038Ω

Features

■ Higher VDSSrating
■ Higher dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested

Application
Switching applications
Description
This device is an N-channel MDmesh™ V PowerMOSFET based on an innovative proprietaryvertical process technology, which  is combinedwith STMicroelectronics’ well-knownPowerM*H™ horizontal layout structure. Theresulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especiallysuitable for applications which require *iorpower density and outstanding efficiency.

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