场效应管 MDP15N60G MDP15N60

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MDP15N60TH,TO-220,MagnaChip/美格纳,DIP/MOS,N场,600V,15A,

 

General Description

These N channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on
state resistance,high switching performance and excellent quality.
These devices are suitable device for SMPS,high Speed switching and general purpose applications.

 

Features

VDS=600V ID=15A @ VGS=10V
RDS(ON) ≤ 0.40E @ VGS = 10V


Applications
Power Supply
PFC
High Current, High Speed Switching

"
品牌/商标

MagnaChip/美格纳

型号/规格

MDP15N60TH,TO-220,MagnaChip/美格纳,DIP/MOS,N场,600V,15A,Ω

种类

*缘栅(MOSFET)

沟道类型

N沟道

导电方式

增强型

封装外形

P-DIT/塑料双列直插

材料

N-FET硅N沟道

夹断电压

30

*间电容

2311

漏*电流

15W