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MDP15N60TH,TO-220,MagnaChip/美格纳,DIP/MOS,N场,600V,15A,
General Description
These N channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on
state resistance,high switching performance and excellent quality.
These devices are suitable device for SMPS,high Speed switching and general purpose applications.
Features
VDS=600V ID=15A @ VGS=10V
RDS(ON) ≤ 0.40E @ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
MagnaChip/美格纳
MDP15N60TH,TO-220,MagnaChip/美格纳,DIP/MOS,N场,600V,15A,Ω
*缘栅(MOSFET)
N沟道
增强型
P-DIT/塑料双列直插
N-FET硅N沟道
30
2311
15W