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K4N60LV,252,IGBT,600V,4A
SGD04N60,252,IGBT,600V,4.9A,不带二* Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC for target applications
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INFINEON/英飞凌
SGD04N60,252,IGBT,600V,4.9A,不带二* AK4N60LV,252,IGBT,600V,4A
*缘栅(MOSFET)
N沟道
增强型
SMD(SO)/表面封装
IGBT*缘栅比*
20
317
9.4A