原装*童场效应管 FQP4N90C

Features                                                                                 N
                                                                                                                                                                                          9
    These   N-Channel   enhancement   mode   power   field   effect                           •   4A, 900V, RDS(on) = 4.2? @VGS = 10 V                                                    0
    transistors       are    produced        using     Fairchild’s     proprietary,           •   Low gate charge ( t*ical             17nC)                                          C

    planar stripe, DMOS technology.                                                           •   Low Crss ( t*ical  5.6 pF)
    This advanced technology has been especially tailored to                                  •   Fast switching
    minimize   on-state   resistance,   provide   *ior   switching                        •   100% avalanche tested
    performance,          and    withstand       high    energy      pulse     in  the        •   Improved dv/dt capability
    avalanche and commutation mode. These devices are well
    suited for high efficiency switch mode power supplies.