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Features N
9
These N-Channel enhancement mode power field effect • 4A, 900V, RDS(on) = 4.2? @VGS = 10 V 0
transistors are produced using Fairchild’s proprietary, • Low gate charge ( t*ical 17nC) C
planar stripe, DMOS technology. • Low Crss ( t*ical 5.6 pF)
This advanced technology has been especially tailored to • Fast switching
minimize on-state resistance, provide *ior switching • 100% avalanche tested
performance, and withstand high energy pulse in the • Improved dv/dt capability
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
FAIRCHILD/*童
FQP4N90C
*缘栅(MOSFET)
N沟道
增强型
L/功率放大
N-FET硅N沟道