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D*CRIPTION
This UD4809 N-Channel MOSFET is produced using UTC
advanced process which has been tailored to make the on-state
resistance minimum and yet maintain low gate charge for
*ior switching performance especially. The UD4809 is well
suited for where low in-line power loss is needed in a very *all
outline surface mount package, such as low voltage and battery
powered applications.
FEATUR*
* Low RDS(ON)
* Low capacitance
* Optimized gate charge
UTC/友顺
UD4809
*缘栅(MOSFET)
N沟道
增强型
SW-REG/开关电源
SMD(SO)/表面封装
N-FET硅N沟道