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12 Amps, 650 Volts N-CHANNEL MOSFET
D*CRIPTION
The UTC 12N65 are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced using UTC’s
proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide *ior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
FEATUR*
* RDS(ON) = 0.7Ω @VGS = 10 V
* Ultra low gate charge ( t*ical 42 nC )
* Low reverse transfer capacitance ( CRSS = t*ical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
UTC/友顺
12N65
*缘栅(MOSFET)
N沟道
增强型
SW-REG/开关电源
N-FET硅N沟道
25(pF)
12000(mA)