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HEXFET POWER MOSFET
D*CRIPTION
The UTC UF3205 uses advanced technology to provide
excellent RDS(ON), fast switching, low gate charge, and extremely
efficient. This device is suitable for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
FEATUR*
* RDS(ON)<8mΩ @VGS=10V
* Ultra Low Gate Charge ( 146nC max )
* Low Reverse Transfer Capacitance ( CRSS = t*. 211 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
UTC/友顺
UF3205
*缘栅(MOSFET)
N沟道
耗尽型
MOS-ARR/陈列组件
SMD(SO)/表面封装
N-FET硅N沟道